Effective escape depth of photoelectrons for hydrocarbon films in total electron yield measurement at the C K-edge

Authors
Ohara, H Yamamoto, Y Kajikawa, K Ishii, H Seki, K Ouchi, Y
Citation
H. Ohara et al., Effective escape depth of photoelectrons for hydrocarbon films in total electron yield measurement at the C K-edge, J SYNCHROTR, 6, 1999, pp. 803-804
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF SYNCHROTRON RADIATION
ISSN journal
09090495 → ACNP
Volume
6
Year of publication
1999
Part
3
Pages
803 - 804
Database
ISI
SICI code
0909-0495(19990501)6:<803:EEDOPF>2.0.ZU;2-L
Abstract
We performed X-ray Absorption Near Edge Structure (XANES) and Atomic Force Microscope (AFM) measurements for the system of multilayers, HTC (hexatriac ontane, n-C36H74)/polyimide/Si, to determine an effective escape depth of p hotoelectrons, L-eff, in HTC films for total electron yield detection at C K-edge. Quantitative degrees of superposition of C K-edge spectra of a satu rated hydrocarbon and a polyimide with aromatic rings were examined to obta in L-eff for HTC films. L-eff of n-alkane at the C K-edge has been determin ed to be is 35 Angstrom and spectroscopy agree closely.