Electronic structures of GaN nanotubes

Citation
Sm. Lee et al., Electronic structures of GaN nanotubes, J KOR PHYS, 34, 1999, pp. S253-S257
Citations number
31
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
34
Year of publication
1999
Supplement
S
Pages
S253 - S257
Database
ISI
SICI code
0374-4884(199906)34:<S253:ESOGN>2.0.ZU;2-D
Abstract
Density functional calculations are used to predict the electronic structur es of GaN nanotubes. The graphitic GaN is an indirect band gap material wit h valence band maximum at K edge. Zigzag nanotube is a semiconductor with d irect band gap, whereas armchair nanotube has an indirect band gap along th e tube axis. The band gaps decrease with the decreasing diameter, contrary to the case of carbon nanotubes.