Admittance spectroscopy of Mg-doped GaN grown by molecular beam epitaxy using RF nitrogen sources

Thermal activation energies of Mg in GaN grown using RF nitrogen source wit h varying hag flux were examined using an admittance spectroscopy technique . There was no noticeable difference or trend in the activation energy with varying MB flux. The thermal activation energy for GaN:Mg was similar to 1 15 meV under the investigated Mg flux range. Negligible persistent photo-co nductivity and yellow luminescence peak in PL observed in the samples sugge st possible reduction of the thermal activation energies compared to the va lues in the literature.