Spot-size converter (SSC) integrated polarization-insensitive semiconductor
optical amplifiers (SOAs) with angled window structure has been designed a
nd fabricated using both selective area growth and successive lateral taper
ing. A narrow beam divergence of 8 degrees x15 degrees, 0.2 dB amplified sp
ontaneous emission ripple, and 0.8 dB polarization sensitivity at 1.55 mu m
wavelength were obtained at 29.7 dB chip gain. This gain is the highest va
lue ever reported for SSC-SOAs grown by selective area growth techniques.