1550 nm polarization insensitive laterally tapered travelling-wave semiconductor laser amplifiers with a narrow circular beam divergence

Authors
Kim, JR Lee, JS Park, SS Park, MW Yu, JS Lee, SD Choo, AG Kim, TI Lee, YH
Citation
Jr. Kim et al., 1550 nm polarization insensitive laterally tapered travelling-wave semiconductor laser amplifiers with a narrow circular beam divergence, J KOR PHYS, 34, 1999, pp. S281-S283
Citations number
5
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
34
Year of publication
1999
Supplement
S
Pages
S281 - S283
Database
ISI
SICI code
0374-4884(199906)34:<S281:1NPILT>2.0.ZU;2-5
Abstract
A polarization-insensitive laterally tapered travelling-wave semiconductor laser amplifiers (TWSLAs) with a narrow circular beam divergence have been fabricated using metal-organic vapor phase epitaxy (MOVPE) technique. A nar row circular beam divergence of 20 degrees x20 degrees, an amplified sponta neous emission (ASE) ripple of 1.0 dB, and a polarization sensitivity of 1. 5 dB were obtained at 27.8 dB chip gain.