Lifetime projection model of semiconductor laser diodes by thermal degradation

Citation
N. Hwang et al., Lifetime projection model of semiconductor laser diodes by thermal degradation, J KOR PHYS, 34, 1999, pp. S318-S321
Citations number
14
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
34
Year of publication
1999
Supplement
S
Pages
S318 - S321
Database
ISI
SICI code
0374-4884(199906)34:<S318:LPMOSL>2.0.ZU;2-V
Abstract
A lifetime projection model of semiconductor laser diodes (LD) is presented . By correlating initial thermal characteristics and long-term degradation, a relationship between LD degradation and ambient temperature has been inv estigated. The proposed model is found to be efficient for the lifetime pro jection of LDs, which requires a thermal characterization only at t = 0.