Textured ZnO thin films by RF magnetron sputtering

Citation
M. Ginting et al., Textured ZnO thin films by RF magnetron sputtering, J KOR PHYS, 34, 1999, pp. S343-S346
Citations number
11
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
34
Year of publication
1999
Supplement
S
Pages
S343 - S346
Database
ISI
SICI code
0374-4884(199906)34:<S343:TZTFBR>2.0.ZU;2-8
Abstract
Textured thin films ZnO has been successfully grown by rf magnetron sputter ing method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured sur face is highly dependent on the argon pressure during the deposition. The p ressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmitt ane of the films are more than 85 % in the wavelength of 400 to 1300 nm, an d haze ratio of about 14 % is obtained at 400 nm wavelength. Beside the tex tured surface, these films also have very low resistivity, which is lower t han 1.4x10(-3) Ohm.cm. X-ray analysis shows that the films with textured su rface have four diffraction peaks on the direction of (110), (002), (101) a nd (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the thin film silicon solar cells.