Growth of polycrystalline GaN and InGaN on various substrates

On the various substrates of silicon (001), fused-silica glass and indium t in oxide (ITO)/glass, polycrystalline GaN thin films have been grown by RF plasma enhanced chemical vapor deposition (PECVD). X-ray diffraction (XRD) measurements revealed that introduction of low temperature GaN buffer layer made the main GaN layer to be sticky and stable, and the main GaN layers w ere oriented in (0002) planes. Polycrystalline InxGa1-xN thin films on ITO/ glass substrates were also grown by RF PECVD. XRD measurement revealed that the (0002) and (10 (1) over bar 1) planes were detected and the 2 theta an gles of the planes shifted to the lower angles with increasing the In vapor ratios. Optical absorption measurements indicated that the absorption band edges of the films shifted to the lower energy with increasing of In solid compositions.