Dependence of optical property on the defects in Si-doped GaN grown by metal organic chemical vapor deposition

We investigated dependence of optical property on the microstructures and d efects for Si-doped GaN grown by metal organic chemical vapor deposition us ing photoluminescence and x-ray diffraction measurements. Radiative transit ions at different wavelengths were observed to be related to the different type of microstructures which can be characterized by x-ray diffraction mea surements. Attempts were made to explain the relation between optical prope rty and microstructures.