Time-resolved photoluminescence measurements in InGaN GaN quantum wells grown by MOCVD

We report the results of time-resolved studies on InGaN/GaN multiple quantu m well. The sample was grown by Vertical rotating disk metalorganic chemica l vapor deposition. Time-resolved photoluminescence (PL) measurements were investigated at various emission-photon energies and in different time doma ins. The behavior of laser excitation intensity dependent PL and decay prof iles of the emission-photon energy dependence has revealed that the main pe ak is due to the recombination of localized excitons. Longer recombination lifetime component which has the decay time of several hundred ns was also observed for the first time with a ns pulsed laser. The properties of these optical transitions was discussed.