Yk. Park et al., Etching effect of carbon tetrabromide in the vertical growth of GaAs during metalorganic chemical vapor deposition, J KOR PHYS, 34, 1999, pp. S432-S434
In order to explain the etching effect of the carbon tetrabromide in the Ve
rtical growth of GaAs during metalorganic chemical vapor deposition. the de
pendence of the vertical growth rate of GaAs epilayer on the growth tempera
ture and on the carbon tetrabromide mole fraction has been investigated. Th
e vertical growth rate decreases with increasing growth temperature in the
range of 600 similar to 700 degrees C, whereas it increases with increasing
growth temperature in the range of 700 similar to 800 degrees C. The verti
cal growth rate, thus, shows the minimum value at the growth temperature of
700 degrees C. The high mole fraction of carbon tetrabromide causes a sign
ificant diminution of the vertical growth rate of GaAs epilayer; The decrem
ent of the vertical growth rate is attributed to the increment of bromine a
toms in the reactor with increasing the carbon tetrabromide mole fraction.
The increment of bromine atoms causes the etching effect of carbon tetrabro
mide.