The effect of structural-phase transitions in metalization layers on radiation stability of NbNx-GaAs contacts

Authors
Belyaev, AA Konakova, RV Milenin, VV Hotovy, I Piaczenski, G
Citation
Aa. Belyaev et al., The effect of structural-phase transitions in metalization layers on radiation stability of NbNx-GaAs contacts, J KOR PHYS, 34, 1999, pp. S443-S446
Citations number
5
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
34
Year of publication
1999
Supplement
S
Pages
S443 - S446
Database
ISI
SICI code
0374-4884(199906)34:<S443:TEOSTI>2.0.ZU;2-8
Abstract
The problem of of structural-phase transitions in the metalization layers o f NbNX-GaAs Schottky contacts is considered. The results of scanning electr on microscopy (SEM), energy dispersion X-rays (EDX) analysis and gamma-irra diation effect on the electro-physical parameters of diodes are presented. It has been found that the radiation stability of NbNX-GaAs contacts could be improved by varying the structural-phase content of NbNX films.