Reactions between phases and electronic processes at the TiBx (TiNx)-GaAs heterostructures interfaces

Using structural, electrophysical and photoluminescence methods, we investi gated the effect of rapid thermal annealing (RTA) on the properties of TiBx (TiNx)-n-n(+)-GaAs structures. It was shown that the changes in the spectr a of point defects in the near-contact regions resulting from RTA at T=400, 600 and 800 degrees C are due to the interactions between phases in the me tallization materials and the substrate. Judging from the heat stability of the electrophysical parameters of Schottky barriers, the TiNx-n-n(+)-GaAs surface-barrier structures have higher heat tolerance.