CdSe/Zn1-xCdxSe quantum wire aarray structures fabricated by self-organization technique

Moderately strained Zn1-xCdxSe layers grown by molecular beam epitaxy (MBE) on the GaAs(110) surfaces obtained by cleaving in ultrahigh vacuum (UHV) p roduced Delta-shaped ridge structures parallel to the [110] direction toget her with pyramidal-shaped islands as a result of the inhomogeneous in-plane strain relaxation. CdSe/Zn1-xCdxSe quantum wire (QWR) array structures wer e fabricated on the GaAs(110) surface utilizing such ridges. Regularly corr ugated CdSe active layer grown on the Zn1-xCdxSe ridges of the lower claddi ng layer caused quasi-one-dimensional structures. The photoluminescence (PL ) peak at 2.44 eV from the samples showed strong polarization characteristi cs of (I-//[110]/I-perpendicular to[110]) = 3.6 due to the quasi-one-dimens ional quantum confinement effect. Sharp PL peak (FWHM of 10 meV) of QWRs wa s observed when the active layer was selectively excited. Moreover, sharp p hotoluminescence excitation (PLE) spectra also reveals that the broadness o f PL is due to the inhomogeneous effect as a result of size fluctuation of QWR structures.