The characteristics of 33 similar to 94 Angstrom thick oxides grown by high
pressure oxidation (HIPOX) technique in 5 atm O-2 ambient at 700 degrees C
have been investigated to use an insulator far ULSI devices. The oxide thi
ckness extracted by high frequency C-V method is about 10 Angstrom thicker
than that measured by TEM. The leakage current of the HIPOX oxide is less t
han 1.0x10(-9) A/cm(2) and the breakdown electric field is larger than 12.1
MV/cm. The midgap interface trap density (D-itm) of the 75 Angstrom thick
HIPOX oxide is about 2.0x10(10) cm(-2).eV(-1) which is comparable to that o
f control oxide. The D-itm variation of the HIPOX oxide is not more than th
at of control oxide as stress time varies. The n-MOSFET with HIPOX oxide sh
ows higher reliability than that with control oxide.