Characteristics of ultrathin oxide grown by high pressure oxidation for ULSI device applications

The characteristics of 33 similar to 94 Angstrom thick oxides grown by high pressure oxidation (HIPOX) technique in 5 atm O-2 ambient at 700 degrees C have been investigated to use an insulator far ULSI devices. The oxide thi ckness extracted by high frequency C-V method is about 10 Angstrom thicker than that measured by TEM. The leakage current of the HIPOX oxide is less t han 1.0x10(-9) A/cm(2) and the breakdown electric field is larger than 12.1 MV/cm. The midgap interface trap density (D-itm) of the 75 Angstrom thick HIPOX oxide is about 2.0x10(10) cm(-2).eV(-1) which is comparable to that o f control oxide. The D-itm variation of the HIPOX oxide is not more than th at of control oxide as stress time varies. The n-MOSFET with HIPOX oxide sh ows higher reliability than that with control oxide.