Monte Carlo simulation on electron transport in Si1-yCy alloy layers

We investigated electron transport in strained Si1-yCy alloy layers grown o n Si(100) substrates using the Monte Carlo simulation. The electron mobilit y higher than that of bulk Si over a wide range of temperatures from 40 K t o 300 K is mainly attributed to the valley splitting induced by the tensile strain in the Si1-yCy layer. For lower temperatures less than 100 K the mo bility increases sharply depending on the carbon fraction up to about 0.6 % . Beyond the fraction, however, it keeps almost constant regardless of incr easing the carbon fraction. On the other hand, we observe a monotonic mobil ity increase with increasing the carbon fraction for a higher temperature r egime.