Persistent spectral hole burning (PSHB) within the F-7(0) - D-5(0) transiti
on of Sm2+, thermal hole-filling and optical hole-filling with the laser li
ght of different wavelengths, 488, 670 and 688 nm were performed, respectiv
ely, at 8 and 200 K in a Sm2+-doped 10Al(2)O . 90SiO(2) glass prepared by a
sol-gel method. The results definitely reveal that the formation of PSHB v
aries depending on temperature in the glass. Two kinds of formation, optica
lly activated rearrangement of OH bonds surrounding the Sm2+ ions in additi
on to one-step electron tunneling, may both contribute to the PSHB at low t
emperature. On the other hand, only one-step electron tunneling contributes
to the PSHB at high temperature. (C) 1999 Elsevier Science B.V. All rights
reserved.