Thermal ionization of impurity centers in Fe-doped Bi12SiO20 and Bi12GeO20crystals

Authors
Panchenko, TV
Citation
Tv. Panchenko, Thermal ionization of impurity centers in Fe-doped Bi12SiO20 and Bi12GeO20crystals, PHYS SOL ST, 41(6), 1999, pp. 916-921
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
41
Issue
6
Year of publication
1999
Pages
916 - 921
Database
ISI
SICI code
1063-7834(199906)41:6<916:TIOICI>2.0.ZU;2-V
Abstract
The spectral and temperature dependence of the optical absorption and therm ally stimulated depolarization currents in Fe-doped Bi12SiO20 and Bi12GeO20 crystals are investigated in the photon energy range 1.36-3.46 eV and temp erature 85-750 K. The results show thermally induced electron redistributio n between donor and acceptor levels and defect association-dissociation pro cesses and are discussed using the configuration-coordinate model. (C) 1999 American Institute of Physics. [S1063-7834(99)01706-2].