Electrophysical properties of resistive thick films based on powdered Sn0.9Sb0.1O2 and glasses with additions of LaB6

The electrophisical properties (temperature dependence of electrical resist ance, activation energy, thermoelectric power, current-voltage characterist ics) of highly resistive thick films containing powders of solid solution S n0.9Sb0.1O2, amorphous glass, and lanthanum hexaboride have been studied. T he ohmic contact was shown to form at the LaB6-glass interface. Due to the contact potential difference the electrons are injected from lanthanum hexa boride particles into the glass interlayers. These electrons are assumed to increase the carrier concentration faking part in the electrical conductio n of the film.