Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction

Cubic GaN was grown on GaAs(100) by low pressure metal organic chemical vap or deposition (MOCVD). X-ray diffraction, scanning electron microscope (SEM ) and photoluminescence (PL) spectra were performed to characterize the qua lity of the GaN film. The PL spectra of cubic GaN thin films being thicker than 1.5 mu m were reported. Triple-crystal diffraction to analyze orientat ion distributions and strain of the thin films was also demonstrated.