High temperature Pt Schottky diode gas sensors on n-type GaN

Authors
Luther, BP Wolter, SD Mohney, SE
Citation
Bp. Luther et al., High temperature Pt Schottky diode gas sensors on n-type GaN, SENS ACTU-B, 56(1-2), 1999, pp. 164-168
Citations number
20
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
56
Issue
1-2
Year of publication
1999
Pages
164 - 168
Database
ISI
SICI code
0925-4005(19990601)56:1-2<164:HTPSDG>2.0.ZU;2-8
Abstract
The characteristics of Pt Schottky diodes an n-type GaN in hydrogen and pro pane are reported for the first time. This response from 200-400 degrees C has been characterized by current-voltage measurements, revealing that the diodes are able to detect hydrogen from 200-400 degrees C and propane from 300-400 degrees C. The high temperature stability of Pt diodes on GaN has b een investigated by long term annealing at 400 degrees C in Ar or 20% O-2 i n Ar. The diodes have been held at 400 degrees C for 500 h without degradat ion of their electrical characteristics or response to hydrogen-containing gases. (C) 1999 Elsevier Science S.A. All rights reserved.