Cobalt silicide processing in a susceptor-based LP-RTP system

Very thin cobalt silicide formation and annealing were investigated using a susceptor-based low-pressure RTP system. Cobalt silicide process sensitivi ty was investigated as a function of process temperature (350 similar to 70 0 degrees C), process time (60 similar to 120 sec), and Co film thickness. A production-worthy shallow silicide contact formation process has been dev eloped with backside emissivity independence using the system. A wide proce ss window and excellent sheet resistance uniformity have been demonstrated for cobalt silicide process integration steps. The net added nonuniformity of typical TiN capped 10nm-thick cobalt films was less than 0.5%.