Management of TEOS LPCVD process effluents

Citation
Yf. Gu et al., Management of TEOS LPCVD process effluents, SOL ST TECH, 42(7), 1999, pp. 151
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
SOLID STATE TECHNOLOGY
ISSN journal
0038111X → ACNP
Volume
42
Issue
7
Year of publication
1999
Database
ISI
SICI code
0038-111X(199907)42:7<151:MOTLPE>2.0.ZU;2-T
Abstract
TEOS LPCVD processes tend to clog the vacuum pumping foreline with effluent byproducts that can increase particle levels, impede gas flow, and cause c atastrophic pump failure. An integrated effluent management solution involv es the correct combination of a nitrogen boundary layer near the inner phys ical wall of the pump line, optimized pump line temperature, and a turbulen t-flow trap. Depending on the installation, the hardware upgrade payback ti me can be less than three weeks, and in some severe cases less than three d ays.