Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations

Authors
Galiev, GB Mokerov, VG Slepnev, YV Khabarov, YV Lomov, AA Imamov, RM
Citation
Gb. Galiev et al., Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations, TECH PHYS, 44(7), 1999, pp. 801-803
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS
ISSN journal
10637842 → ACNP
Volume
44
Issue
7
Year of publication
1999
Pages
801 - 803
Database
ISI
SICI code
1063-7842(199907)44:7<801:PASOGF>2.0.ZU;2-6
Abstract
The structural perfection of GaAs epitaxial films grown by molecular beam e pitaxy on substrates with the (100), (111)A, and (111)B orientations is inv estigated by double-crystal and triple-crystal x-ray diffractometry. It is found that the ratio gamma of the molecular fluxes of arsenic and gallium h as a strong influence on the structural quality of the epitaxial films. The optimum values of the parameter gamma are found for each of the substrate orientations (100), (111)A, and (111)B. (C) 1999 American Institute of Phys ics. [S1063-7842(99)01407-5].