Gb. Galiev et al., Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations, TECH PHYS, 44(7), 1999, pp. 801-803
The structural perfection of GaAs epitaxial films grown by molecular beam e
pitaxy on substrates with the (100), (111)A, and (111)B orientations is inv
estigated by double-crystal and triple-crystal x-ray diffractometry. It is
found that the ratio gamma of the molecular fluxes of arsenic and gallium h
as a strong influence on the structural quality of the epitaxial films. The
optimum values of the parameter gamma are found for each of the substrate
orientations (100), (111)A, and (111)B. (C) 1999 American Institute of Phys
ics. [S1063-7842(99)01407-5].