The overall. stress state in gamma-channels of gamma/gamma'-microstructures
has three components: misfit stresses (due to gamma/gamma'-misfit), disloc
ation stress fields and the external stress. In the present study glide and
climb forces on gamma-channel dislocations (from one slip system a(o)/2[01
(1) over bar](111)) are studied calculating Peach-Koehler forces for gamma
/gamma'-interface dislocations exposed to the overall stress state. A therm
o-elastic finite element calculation of misfit stresses is performed and th
e results are used as one input into a simplified discrete dislocation mode
l (DDM). The influence of gamma'-volume fraction and dislocation density in
the gamma-channels is explicitly considered. The calculations were motivat
ed by previous mechanical and microstructural investigations in which eleme
ntary dislocation processes were identified by transmission electron micros
cropy as part of the mechanism of high temperature and low stress creep. Th
e results help to interpret phenomenological concepts (like build up of bac
k stress) and rationalize microstructural findings (like dislocation networ
k spacings). (C) 1999 Acta Metallurgica Inc. Published by Elsevier Science
Ltd. All rights reserved.