Radiation of dressed excitons in the semiconductor microcavity

Citation
Sa. Liu et al., Radiation of dressed excitons in the semiconductor microcavity, ACT PHY C E, 8(7), 1999, pp. 514-520
Citations number
9
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA-OVERSEAS EDITION
ISSN journal
10003290 → ACNP
Volume
8
Issue
7
Year of publication
1999
Pages
514 - 520
Database
ISI
SICI code
1000-3290(199907)8:7<514:RODEIT>2.0.ZU;2-E
Abstract
In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multipa rticle process. Through the quantum electrodynamics method, the dipole emis sion density and system energy decayed equation were obtained. And it was p redicted that the excitons decay into a very narrow mode when the exciton-c avity coupling becomes strong enough.