Hot acoustic phonons at low temperature in InP

Authors
Bousseta, M Fadel, M Akhouayri, E Moatadid, A
Citation
M. Bousseta et al., Hot acoustic phonons at low temperature in InP, ANN CHIM-SC, 24(6), 1999, pp. 417-428
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
ANNALES DE CHIMIE-SCIENCE DES MATERIAUX
ISSN journal
01519107 → ACNP
Volume
24
Issue
6
Year of publication
1999
Pages
417 - 428
Database
ISI
SICI code
0151-9107(199906)24:6<417:HAPALT>2.0.ZU;2-U
Abstract
We present a numerical method of determination of steady state hot-electron and hot-phonon distribution functions. The coupled Boltzmann equations for acoustical phonons and for the electrons, in the Gamma and L valleys off I II-V semiconductor compounds, are solved. The computation are used for InP at 77 K. We obtain a significant modification of the distribution of hot ac oustical phonons.