Strain dependent gap nature of epitaxial beta-FeSi2 in silicon by first principles calculations

Authors
Miglio, L Meregalli, V Jepsen, O
Citation
L. Miglio et al., Strain dependent gap nature of epitaxial beta-FeSi2 in silicon by first principles calculations, APPL PHYS L, 75(3), 1999, pp. 385-387
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
3
Year of publication
1999
Pages
385 - 387
Database
ISI
SICI code
0003-6951(19990719)75:3<385:SDGNOE>2.0.ZU;2-S
Abstract
In this letter, we show that the gap nature in beta-FeSi2 is turned from in direct to direct when a suitable strain field is induced in the structure. Such a lattice deformation corresponds to a full lattice matching for the e pitaxial relationship beta-FeSi2(110)//Si(111), which is one of the most co mmon orientations occurring to beta-FeSi2 precipitates in silicon. (C) 1999 American Institute of Physics. [S0003-6951(99)01829-X].