Adjustment of the critical current in a Nb-InxGa1-xAs/InP Josephson contact by light exposure

Authors
Schapers, T Muller, RP Kaluza, A Hardtdegen, H Luth, H
Citation
T. Schapers et al., Adjustment of the critical current in a Nb-InxGa1-xAs/InP Josephson contact by light exposure, APPL PHYS L, 75(3), 1999, pp. 391-393
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
3
Year of publication
1999
Pages
391 - 393
Database
ISI
SICI code
0003-6951(19990719)75:3<391:AOTCCI>2.0.ZU;2-Y
Abstract
The critical current of a Nb-InGaAs/InP Josephson junction is increased ste pwise by light exposure. Shubnikov-de Haas effect measurements under illumi nation show that the increase of the critical current originates from photo generated electrons in the quantum well. A further enhancement of the criti cal current is gained under continuous illumination. (C) 1999 American Inst itute of Physics. [S0003-6951(99)00229-6].