CeO2 on Si(111) 7 X 7 and Si(111)-H 1 X 1, an interface study by high-resolution photoelectron spectroscopy

The formation of the CeO2-Si(111) interface was studied by high-resolution photoelectron spectroscopy. It is shown that CeO2 and Si(111) forms a highl y reactive: interface with a strong interdiffusion of Si into the CeO2. A p assive silicon surface formed by saturating the Si dangling bonds with hydr ogen is considerably less reactive. Defects on the surface, however, act as nucleations centres for reactions of a Si:Ce:O matrix. Oxygen leaves the s urface at about 800 degrees C and at 1000 degrees C a surface reconstructio n of Si(111)-Ce 2 X 2/root 3 X root 3 is formed. (C) 1999 Elsevier Science B.V. All rights reserved.