GMR in Ni Cu multilayers: an electronic structure study

Citation
Sk. Ghosh et al., GMR in Ni Cu multilayers: an electronic structure study, B MATER SCI, 22(4), 1999, pp. 761-763
Citations number
9
Categorie Soggetti
Material Science & Engineering
Journal title
BULLETIN OF MATERIALS SCIENCE
ISSN journal
02504707 → ACNP
Volume
22
Issue
4
Year of publication
1999
Pages
761 - 763
Database
ISI
SICI code
0250-4707(199906)22:4<761:GINCMA>2.0.ZU;2-N
Abstract
Ab initio self-consistent semi-relativistic spin-polarized TB-LMTO energy b and calculations have been carried out on Ni/Cu(100) multilayers, to study the in-plane as well as perpendicular to plane giant magnetoresistance (GMR ) effects. The magnetic interaction energies, evaluated as a function of la yer thickness, indicate that the antiferromagnetic ordering is a possible g round state for manifestation of GMR. Using the density of states at Fermi level and the Fermi velocity, GMR has been estimated as a function of the C u spacer thickness.