Optical properties of tetragonal germanium nanocrystals deposited by the cluster-beam evaporation technique: New light emitting material for future

Citation
S. Nozaki et al., Optical properties of tetragonal germanium nanocrystals deposited by the cluster-beam evaporation technique: New light emitting material for future, B MATER SCI, 22(3), 1999, pp. 377-381
Citations number
8
Categorie Soggetti
Material Science & Engineering
Journal title
BULLETIN OF MATERIALS SCIENCE
ISSN journal
02504707 → ACNP
Volume
22
Issue
3
Year of publication
1999
Pages
377 - 381
Database
ISI
SICI code
0250-4707(199905)22:3<377:OPOTGN>2.0.ZU;2-J
Abstract
The germanium (Ge) nanocrystals were deposited on substrates whose temperat ure was kept at room or liquid nitrogen (LN2) temperature by the cluster-be am evaporation technique. The deposited films are found to consist of the t etragonal crystalline structure rather than the diamond structure of bulk G e. Such a phase-transition has been theoretically predicted for sizes small er than 4 nm, which agrees with the size measured by the transmission elect ron microscopy (TEM), The tetragonal Ge is expected to have a direct band g ap of 1.47 eV, Furthermore, the Ge film deposited at LN, temperature exhibi ts unique properties, such as photo-oxidation and blue-light emission, The Ge-nanocrystal films deposited by the cluster-beam evaporation technique ar e attractive materials for application to light emitting devices in future.