Self-organized growth of In(Ga)As/GaAs quantum dots and their opto-electronic device applications

Citation
P. Bhattacharya et al., Self-organized growth of In(Ga)As/GaAs quantum dots and their opto-electronic device applications, B MATER SCI, 22(3), 1999, pp. 519-529
Citations number
72
Categorie Soggetti
Material Science & Engineering
Journal title
BULLETIN OF MATERIALS SCIENCE
ISSN journal
02504707 → ACNP
Volume
22
Issue
3
Year of publication
1999
Pages
519 - 529
Database
ISI
SICI code
0250-4707(199905)22:3<519:SGOIQD>2.0.ZU;2-Z
Abstract
The self-assembly technique of forming three-dimensional islands in the gro wth of highly strained semiconductor heterostructures has emerged as a powe rful technique for the realization of an ordered array of quantum dots. Suc h quantum dots have been incorporated into the active region of optoelectro nic and microelectronic devices in the hope of improving device performance or engineering new ones. Here we present the growth, optical characterizat ion, and device applications for self-assembled InGaAs/GaAs quantum dots.