Creation and motion of dislocations and fracture in metal and silicon crystals

Authors
Citation
M. Doyama, Creation and motion of dislocations and fracture in metal and silicon crystals, B MATER SCI, 22(3), 1999, pp. 723-728
Citations number
7
Categorie Soggetti
Material Science & Engineering
Journal title
BULLETIN OF MATERIALS SCIENCE
ISSN journal
02504707 → ACNP
Volume
22
Issue
3
Year of publication
1999
Pages
723 - 728
Database
ISI
SICI code
0250-4707(199905)22:3<723:CAMODA>2.0.ZU;2-2
Abstract
By making a step on one surface (11(2) over bar) of a rectangular small par alellepiped copper crystal, dislocations could be created by the molecular dynamic method. The dislocation created was not a complete edge dislocation but a pair of Heidenreich-Shockley partial dislocations. Each time a dislo cation was created, the stress on the surface was released. Small copper cr ystals having a notch were pulled (until fracture), compressed and buckled by use of the molecular dynamic method. An embedded atom potential was used to represent the interaction between atoms. Dislocations were created near the tip of the notch. A very sharp yield stress was observed. The results of high speed deformations of pure silicon small crystals using the molecular dynamics are presented. The results suggest that plastic def ormation may be possible for the silicon with a high speed deformation even at room temperature. Another small size single crystal, the same size and the same surfaces, was compressed using molecular dynamic method. The surfa ces are {110}, {112} and {111}. The compressed direction was [111]. It was found that silicon crystals are possible to be compressed with a high speed deformation. This may suggest that silicon may be plastically deformed wit h high speed deformation.