THE SCANNING MICROSCOPE FOR SEMICONDUCTOR CHARACTERIZATION - PHOTOCURRENT, PHOTOVOLTAGE AND ELECTROLYTE ELECTROREFLECTANCE IMAGING AT THE N-MOSE2 I- INTERFACE/

Digital images of photocurrent, photovoltage and electrolyte electrore flectance at the n-MoSe2\electrolyte interface, with micrometric later al resolution, are presented under different experimental conditions. Inhomogeneities in the surface distribution of the parameters controll ing both the semiconductor photoresponse and the kinetics of transfer of photogenerated charge carriers to the electrolyte can be inferred f rom these images. A clear influence of the semiconductor topography on these photoeffects is evidenced. So, the photoresponse is observed to decrease in regions with structural surface defects, due to the exist ence of associated bulk recombination centers. The state of the van de r Waals surface in contact with the electrolyte is shown to be a main factor determining the photoelectrochemical behavior of the n-MoSe2 el ectrode.