Preparation of GaN thin films by reactive ionized cluster beam technique

GaN thin films were prepared by reactive ionized cluster beam technique at relatively low substrate temperature about 400 degrees C. The composition, structure and morphology of the films were characterized by x-ray photoelec tron spectroscopy, transmission electron microscopy (TEM) and scanning elec tron microscopy (SEM). The binding energy of N 1s electron in the film is 3 97.85eV which shows the formation of Ga-N bonding. The film has a. polycrys talline structure revealed by the measurement results of TEM and SEM. It wa s found that raising nitrogen ion ratio in the beam is helpful to decrease oxygen content in the film.