Two-dimensional dopant profiling of an integrated circuit using bias-applied phase-imaging tapping mode atomic force microscopy

Tapping mode atomic force microscopy was used to spatially resolve areas of different doping type and density on a static random access memory integra ted circuit. The application of a dc bias applied between cantilever and sa mple during imaging results in a change in the tapping-mode phase contrast that depends on the doping density of the imaged area. Our experiments demo nstrated that this method allows for distinguishing between p- and n-doped areas as well as distinguishing between regions of doping densities ranging from 10(16) to 10(20) cm(-3). (C) 1999 The Electrochemical Society. S1099- 0062(99)03-112-2. All rights reserved.