1-8-GHz GaN-based power amplifier using flip-chip bonding

Citation
Jj. Xu et al., 1-8-GHz GaN-based power amplifier using flip-chip bonding, IEEE MICR G, 9(7), 1999, pp. 277-279
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
9
Issue
7
Year of publication
1999
Pages
277 - 279
Database
ISI
SICI code
1051-8207(199907)9:7<277:1GPAUF>2.0.ZU;2-T
Abstract
We report the first gallium nitride (GaN)-based broad-band power amplifier, The circuit was fabricated on an AlN substrate using AlGaN/GaN power high- electron mobility transistors (HEMT's), grown on sapphire substrates, which were flip-chip bonded for thermal management. The amplifier employed a mod ified traveling-wave power amplifier (TWPA) topology that eliminated the ba ckward wave of conventional TWPA's, Using four HEMT's each with 0.75-mu m g ate length and 0.75-mm gate periphery, a small-signal gain of similar to 7 dB was obtained with a bandwidth of 1-8 GHz, At mid-band, an output power o f 3.6 W was obtained when biased at V-ds, = 18 V and 4.5 W when biased at V -ds, = 22 V.