Low-voltage BiCMOS four-quadrant multiplier using triode-region transistors

Citation
Si. Liu et al., Low-voltage BiCMOS four-quadrant multiplier using triode-region transistors, IEEE CIRC-I, 46(7), 1999, pp. 861-864
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS
ISSN journal
10577122 → ACNP
Volume
46
Issue
7
Year of publication
1999
Pages
861 - 864
Database
ISI
SICI code
1057-7122(199907)46:7<861:LBFMUT>2.0.ZU;2-Q
Abstract
A low-voltage BICMOS four-quadrant multiplier using triode-region transisto rs is presented. This circuit has been fabricated in a 1.0-mu m BiCMOS proc ess. Experimental results show that for a power supply of +/-1.5 V, the lin ear range is over +/-0.6 V with the linearity error of less than 2%. The to tal harmonic distortion is less than 2% with an input range up to +/-0.6 V, The measured -3-dB bandwidth of this proposed BiCMOS multiplier is about 1 0 MHz. This circuit is expected to be useful in low-voltage analog signal-p rocessing applications.