MOSFET diode as a feedback reset element on charge amplifiers

Citation
G. Bertuccio et al., MOSFET diode as a feedback reset element on charge amplifiers, IEEE NUCL S, 46(3), 1999, pp. 757-760
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
46
Issue
3
Year of publication
1999
Part
3
Pages
757 - 760
Database
ISI
SICI code
0018-9499(199906)46:3<757:MDAAFR>2.0.ZU;2-E
Abstract
A MOSFET, connected as a diode with gate and drain short circuited and bias ed in saturation mode, is proposed as a substitute for the high-value feedb ack resistor to provide de feedback and signal reset in integrated charge a mplifiers with BJT input transistors. This paper describes the MOSFET desig n rules to set the desired value of the discharge time constant, to minimiz e its noise contribution, and to operate it in a low voltage circuit, The b ehavior of the MOSFET as an almost fixed value resistor is evidenced by the single time-constant discharge of the signal at the output of a prototype preamplifier for fast (<50 ns) shaping, whose experimental noise performanc e is also reported.