Large area silicon drift detectors for X-rays - New results.

Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter h exagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range -75 ts 25 degrees C using Peltier cooling, and from 0.125 to 6 mu s amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm(2) and 1 cm(2) detectors, respectively (at 5.9 keV, -75 degrees C, 6 Cls shaping time). The uniformity of the detector res ponse over the entire active area (measured using 560 nm light) was < 0.5 % .