A comparison of IGBT models for use in circuit design

In choosing an accurate insulated gate bipolar transistor (IGBT) model for power electronic circuit design, physics-based models are frequently prefer red due to their high accuracy and fast simulation speed in comparison to o ther types of models. In this paper, an experimental comparison of two such models is made, using parameters extracted from experimental measurements. The comparison focuses on two particular IGBT's-the BUP202 and the BUK854 IGBT's-representing the two common types of IGBT's, respectively, the nonpu nchthrough and the punchthrough IGBT, The models are investigated for the I GBT's operating in three situations typical of low-power (600 V, 10 A) appl ications.