Melt growth of InAs1-xPx crystals under controlled vapor pressure

Authors
Semenova, GV Sidorov, AV Goncharov, EG
Citation
Gv. Semenova et al., Melt growth of InAs1-xPx crystals under controlled vapor pressure, INORG MATER, 35(7), 1999, pp. 655-657
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
35
Issue
7
Year of publication
1999
Pages
655 - 657
Database
ISI
SICI code
0020-1685(199907)35:7<655:MGOICU>2.0.ZU;2-D
Abstract
InAs1-xPx crystals with reproducible properties are grown via two-zone synt hesis followed by directional melt solidification under controlled vapor pr essure.