We report a study of the resistive transitions in Bi2Sr2CaCu2O8+x in presen
ce of an applied magnetic field (up to 12 tesla) at various field orientati
ons. We focus our attention on the results obtained with orientations paral
lel and perpendicular to the (a,b) planes. We show that scaling arguments,
typical of dissipative regimes independent of oriented defects, can explain
the experimental findings, provided a 3D-2D crossover is assumed as the te
mperature is lowered, due to the variation of the out of plane coherence le
ngth.