Analysis of NB Josephson junction properties under optical irradiation

Citation
E. Monticone et al., Analysis of NB Josephson junction properties under optical irradiation, INT J MOD B, 13(9-10), 1999, pp. 1295-1300
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
ISSN journal
02179792 → ACNP
Volume
13
Issue
9-10
Year of publication
1999
Pages
1295 - 1300
Database
ISI
SICI code
0217-9792(19990420)13:9-10<1295:AONJJP>2.0.ZU;2-W
Abstract
The gap voltage shift of Nb Josephson junctions fabricated on different sub strates is measured under optical illumination at several conditions of lig ht intensity and chopping frequency. The signal dependence on the chopping frequency for junctions realized on glass substrates is bolometer-like with a strong thermal coupling between film and substrate. The responsivity of a junction of 50 mu m x 20 mu m is 50 V/W in vacuum and at liquid helium te mperature, and its time constant is lower than 10 mu s. The linearity of th e response on the optical power extends over five order of magnitude. The r esponse of junctions fabricated on silicon substrates is flat versus the ch opping frequency and about 100 times lower than a junction on glass with th e same incident optical power. The shift of the gap at temperatures between 1.2 K and 4.2 K has been measured to separate the nonequilibrium effects f rom the heating effects.