Defect clusters and thermoluminescence in LiF crystals

Citation
At. Davidson et al., Defect clusters and thermoluminescence in LiF crystals, J APPL PHYS, 86(3), 1999, pp. 1410-1414
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
3
Year of publication
1999
Pages
1410 - 1414
Database
ISI
SICI code
0021-8979(19990801)86:3<1410:DCATIL>2.0.ZU;2-S
Abstract
The thermoluminescence of pure and doped LiF crystals has been measured fol lowing irradiation at ambient temperature with gamma and x rays. Factors in vestigated include the effects of dopants (Mg, Mg/ Ti, and Fe) and of dose. Results are compared with optical absorption and photoluminescence measure ments made previously on the same crystals. The role of F, F-3(+), Z(2), an d colloids in the emission process is discussed. Some new effects are repor ted including step-like features in the glow curves at large doses. These a re explained in terms of the clustering of interstitial defects formed duri ng radiolysis. (C) 1999 American Institute of Physics. [S0021-8979(99)01315 -8].