Many mid-infrared semiconductor laser sources are now being developed with
superlattice active regions. Calculations of gain, index of refraction, and
intervalence subband absorption for these laser materials require accurate
subband energies, wave functions, and radiative matrix elements. We have r
ecently begun using a solution method based on the empirical pseudopotentia
l method (EPM). This method shows particular strength in analyzing structur
es with short periods or thin layers, for which the standard method, based
on k . p perturbation theory and the envelope function approximation, may b
e problematical. We will describe the EPM applied to bulk solids and then d
emonstrate our direct generalization of the method for applications to supe
rlattice structures. Calculations for recently developed mid-infrared semic
onductor lasers using type-II superlattice active regions will be used to i
llustrate the method. (C) 1999 American Institute of Physics. [S0021-8979(9
9)07515-5].