Electrical and dielectric properties in double doped BaTiO3 showing relaxor behavior

Citation
Mm. Kumar et al., Electrical and dielectric properties in double doped BaTiO3 showing relaxor behavior, J APPL PHYS, 86(3), 1999, pp. 1634-1637
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
3
Year of publication
1999
Pages
1634 - 1637
Database
ISI
SICI code
0021-8979(19990801)86:3<1634:EADPID>2.0.ZU;2-H
Abstract
BaTiO3, when doped with minute concentrations of Bi+3 and Fe+3, was found t o exhibit relaxor behavior. The data on dielectric constant performed as a function of frequency and temperature indicate a reduction in the transitio n temperature with increase in frequency. A poled sample indicated a decrea se in the transition temperature compared to an unpoled sample. It was foun d that the grain boundary capacitance were negligible and the relaxations o ccurred are only due to the bulk of the sample. The results have been discu ssed using impedance and modulus spectroscopy. (C) 1999 American Institute of Physics. [S0021-8979(99)00615-5].