Metal organic vapour-phase epitaxy (MOVPE) growth of InP and InGaAs casingtertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N-2 ambient

We have investigated the growth of InP and InGaAs/InP using TEA and TBP in N-2 ambient. This process eliminates both the explosive H-2 and the toxic h ydrides as precursors. General growth aspects are reported and the process window for defect free growth is determined to be T-growth > 660 degrees an d a minimal V/III ratio less than or equal to 20 at 100 mbar. The uniformit y improves and the electrical characteristics are comparable or better than those of the standard MOVPE process. Broad area bulk (Q(1.57 mu m)) lasers reveal current densities below 2 kA/cm(2). (C) 1999 Elsevier Science B.V. All rights reserved.