The use of 1,2,3,4,5 pentamethylcyclopentadiene as an in situ growth modifier chemical for the chemical vapour deposition of iron from iron pentacarbonyl
Pa. Lane et Pj. Wright, The use of 1,2,3,4,5 pentamethylcyclopentadiene as an in situ growth modifier chemical for the chemical vapour deposition of iron from iron pentacarbonyl, J CRYST GR, 204(3), 1999, pp. 298-301
Using the technique of metal organic chemical vapour deposition (MOCVD), th
e growth rate of iron from iron pentacarbonyl is significantly modified by
the addition of 1,2,3,4,5 pentamethylcyclopentadiene as a growth modifier c
hemical to the growth environment. In the lower growth temperature range be
low 250 degrees C, the iron growth rate is reduced by the addition of 1,2,3
,4,5 pentamethylcyclopentadiene, and above 250 degrees C, the iron growth r
ate is increased by up to an order of magnitude. The use of a growth modifi
er therefore extends the useful temperature range for iron deposition from
iron pentacarbonyl to higher temperatures. Crown (C) 1999 Published by Else
vier Science B.V. All rights reserved.