The use of 1,2,3,4,5 pentamethylcyclopentadiene as an in situ growth modifier chemical for the chemical vapour deposition of iron from iron pentacarbonyl

Citation
Pa. Lane et Pj. Wright, The use of 1,2,3,4,5 pentamethylcyclopentadiene as an in situ growth modifier chemical for the chemical vapour deposition of iron from iron pentacarbonyl, J CRYST GR, 204(3), 1999, pp. 298-301
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
204
Issue
3
Year of publication
1999
Pages
298 - 301
Database
ISI
SICI code
0022-0248(199907)204:3<298:TUO1PA>2.0.ZU;2-J
Abstract
Using the technique of metal organic chemical vapour deposition (MOCVD), th e growth rate of iron from iron pentacarbonyl is significantly modified by the addition of 1,2,3,4,5 pentamethylcyclopentadiene as a growth modifier c hemical to the growth environment. In the lower growth temperature range be low 250 degrees C, the iron growth rate is reduced by the addition of 1,2,3 ,4,5 pentamethylcyclopentadiene, and above 250 degrees C, the iron growth r ate is increased by up to an order of magnitude. The use of a growth modifi er therefore extends the useful temperature range for iron deposition from iron pentacarbonyl to higher temperatures. Crown (C) 1999 Published by Else vier Science B.V. All rights reserved.